View 2sc5551 datasheet:

Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions · High fT : (fT=3.5GHz typ). unit:mm · Large current : (IC=300mA). 2038A · Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCEO 30 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 300 mA Collector Current (pulse) ICP 600 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?