View 2sc5566 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2013/2SC5566] 4.5 · Adoption of FBET and MBIT processes. 1.5 1.6 · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. 0.4 0.5 · High allowable power dissipation. 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)80 V Collector-to-Emitter Vol
Keywords
2sc5566 Datasheet, Design, MOSFET, Power
2sc5566 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5566 Database, Innovation, IC, Electricity
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