All Transistors. Datasheet

 

View 2sc5570 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5570

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 µs (Typ.) f MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V DC IC 28 Collector Current A JEDEC ? Pulse ICP 56 JEITA ? Base Current IB 14 A Collector Power Dissipation PC 220 W TOSHIBA 2-21F2A Junction Temperature Tj 150 °C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 °C ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SY

Keywords

 2sc5570 Datasheet, Design, MOSFET, Power

 2sc5570 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5570 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.