View 2sc5574 datasheet:

2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 ? 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3) (1) Base Gate ( ) (2) Collector Drain Absolute maximum ratings (Ta = 25°C) ( ) ROHM : TO-220FN (3) Emitter Source Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO V 80 Emitter-base voltage VEBO 6 V 4 A(DC) IC Collector current 6 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25°C) Junction temperature Tj 150 °C Storage temp