View 2sc5575 datasheet:

2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18µs at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 ? Absolute maximum ratings (Ta = 25°C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collector-base voltage VCBO 250 V 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate Collector-emitter voltage VCEO 120 V (1) (2) (3) ( ) (2) Collector Drain Emitter-base voltage VEBO 12 V ( ) (1) (2) (3) (3) Emitter Source 7 A Collector current IC ROHM : TO-220FN 15 A(t=100ms) 2 W Collector power dissipation PC 25 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55 ? +150 °C Packaging