View 2sc5576 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (60�10V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B : Base R1 4.5k? C : Collector R2 300? E : Emitter Absolute maximum ratings (Ta=25�C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60�10 V Collector-emitter voltage VCEO 60�10 V Emitter-base voltage VEBO 6 V 4 A(DC) Collector current IC 6 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse, Pw=100ms * Packaging specifications an
Keywords
2sc5576 Datasheet, Design, MOSFET, Power
2sc5576 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5576 Database, Innovation, IC, Electricity
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