View 2sc5578 datasheet:

Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed. unit:mm · High breakdown voltage (VCBO=1600V). 2048B · High reliability (Adoption of HVP process). [2SC5578] · Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.5 W Collector Dissipation PC Tc=25?C 140 W ?C Junction Temperat