View 2sc5584 datasheet:

Power Transistors 2SC5584 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.0±0.5 5.0±0.3 (3.0) ? 3.3±0.2 Features • High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) • High-speed switching • Wide area of safe operation (ASO) (1.5) 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings TC = 25°C 0.6±0.2 Parameter Symbol Rating Unit 5.45±0.3 10.9±0.5 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V 1: Base 1 2 3 VCEO 600 V 2: Collector 3: Emitter Emitter to base voltage VEBO 7V TOP-3L Package Peak collector current ICP 30 A Marking Symbol: C5584 Collector current IC 20 A Base current IB 8 A Internal Connection TC = 25°C PC 150 W Collector p