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View 2sc5590 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5590

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1µs (Typ.) f MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V DC IC 16 Collector Current A JEDEC ? Pulse ICP 32 JEITA ? Base Current IB 8 A Collector Power Dissipation PC 200 W TOSHIBA 2-21F2A Junction Temperature Tj 150 °C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 °C ELECTRICAL CHARACTERISTICS (Tc

Keywords

 2sc5590 Datasheet, Design, MOSFET, Power

 2sc5590 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5590 Database, Innovation, IC, Electricity

 

 
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