View 2sc5703 datasheet:

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C • Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) • High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A Pulse ICP 7 JEDEC ? Base current IB 400 mA JEITA ? DC PC 800 Collector power TOSHIBA 2-3S1A mW dissipation (Note) t = 10 s 1250 Weight: 0.01 g (typ.) Junction te