View 2sc5712 datasheet:

2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C • Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) • High-speed switching: t = 120 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 3.0 Collector current A Pulse ICP 5.0 JEDEC ? Base current IB 300 mA JEITA SC-62 DC PC 1.0 Collector power W dissipation TOSHIBA 2-5K1A (Note) t = 10 s 2.5 Weight: 0.05 g (typ.) Junction temperature T