View 2sc5714 datasheet:

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C • Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) • High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A Pulse ICP 7 JEDEC ? Base current IB 400 mA JEITA SC-62 DC PC 1.0 Collector power W dissipation TOSHIBA 2-5K1A (Note) t = 10 s 2.5 Weight: 0.05 g (typ.) Junction tem