View 2sc5716 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV • High voltage: V = 1700 V CBO • High speed: t (2) = 0.2 µs (typ.) f • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1700 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 8 Collector current A Pulse ICP 16 Base current IB 4 A Collector power dissipation PC 55 W Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? TOSHIBA 2-16E3A Equivalent Circuit 2. Collector Weight: 5.5 g (typ.) 1. Base 40 ? (typ.) 3. Emitter Electrical
Keywords
2sc5716 Datasheet, Design, MOSFET, Power
2sc5716 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5716 Database, Innovation, IC, Electricity
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