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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5717

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V • Low saturation voltage: V = 3 V (max) CE (sat) • High speed: t (2) = 0.1 µs (typ.) f Maximum Ratings (Tc = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 21 Collector current A Pulse ICP 42 Base current IB 10.5 A JEDEC ? Collector power dissipation PC 75 W Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55~150 °C TOSHIBA 2-16E3A Weight: 5.5 g (typ.) Electrical Characteristics (Tc = =

Keywords

 2sc5717 Datasheet, Design, MOSFET, Power

 2sc5717 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5717 Database, Innovation, IC, Electricity

 

 
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