View 2sc5755 datasheet:

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications � High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C � Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) � High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25�C) = = Characteristic

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