View 2sc5755 datasheet:

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C • Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) • High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 3.5 Base current IB 200 mA JEDEC ? DC 500 Collector power JEITA ? PC (Note) mW dissipation t = 10 s 750 TOSHIBA 2-3S1C Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 150 °C