View 2sc5763 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions • High breakdown voltage. unit : mm • High reliability. 2010C • High-speed switching. [2SC5763] • Wide ASO. 10.2 4.5 • Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter SANYO : TO-220 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 700 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V Collector Current IC 7 A Collector Current (Pulse) ICP PW?300µs, Duty cycle?10% 14 A 1.75 W Collector Dissipation PC Tc=25°C55 W Junction Temperature Tj 150 °C Storage Temperatu
Keywords
2sc5763 Datasheet, Design, MOSFET, Power
2sc5763 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5763 Database, Innovation, IC, Electricity
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