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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5765

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25°C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base voltage VEBO 7 V DC IC 5 Collector current A Pulsed ICP 9 Collector power dissipation PC (Note1) 550 mW Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? Note 1: When a device is mounted on a glass epoxy board (35 mm ? 30 mm ? 1mm) TOSHIBA 2-4E1A Weight: 0.13 g Electrical Characteristics (Ta = = 25°C) = = Characteristic Symbol Test Con

Keywords

 2sc5765 Datasheet, Design, MOSFET, Power

 2sc5765 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5765 Database, Innovation, IC, Electricity

 

 
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