View 2sc5784 datasheet:

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C • Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) • High-speed switching: t = 45 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Collector current A Pulse ICP 2.5 Base current IB 150 mA JEDEC ? t = 10 s PC 750 Collector power JEITA ? mW dissipation (Note 1) DC 500 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ