View 2sc5810 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C • Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) • High-speed switching: t = 85 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol
Keywords
2sc5810 Datasheet, Design, MOSFET, Power
2sc5810 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5810 Database, Innovation, IC, Electricity
