View 2sc5810 datasheet:

2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C • Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) • High-speed switching: t = 85 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 1.0 Collector current A Pulse ICP 2.0 JEDEC ? Base current IB 0.1 A JEITA SC-62 DC 2.0 Collector power PC (Note) W dissipation TOSHIBA 2-5K1A t = 10 s 1.0 Weight: 0.05 g (typ.) Junction temperature Tj 150 °C Storage temperature range Tstg -55 to