View 2sc5886 datasheet:

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications • High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C • Low collector-emitter saturation: V = 0.22 V (max) CE (sat) • High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 5 Collector current A Pulse ICP 10 JEDEC ? Base current IB 0.5 A JEITA SC-64 Ta = 25°C 1 Collector power Pc W dissipation Tc = 25°C 20 TOSHIBA 2-7J1A Junction temperature Tj 150 °C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 °C Electrical Characteristic