View 2sc5886 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications • High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C • Low collector-emitter saturation: V = 0.22 V (max) CE (sat) • High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo
Keywords
2sc5886 Datasheet, Design, MOSFET, Power
2sc5886 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5886 Database, Innovation, IC, Electricity
