View 2sd1030 e datasheet:

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4± 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO–236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collec