View 2sd1119 e datasheet:

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45° low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4± 0.08 automatic insertion through the tape packing and the magazine 0.4± 0.04 0.5± 0.08 packing. 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V 1:Base Emitter to base voltage VEBO 7 V 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package Peak collector current ICP 5 A Collector current IC 3