View 2sd1140 datasheet:

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 1.5 A Base current IB 50 mA Collector power dissipation PC 900 mW Junction temperature Tj 150 °C JEDEC TO-92MOD Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-5J1A Equivalent Circuit Weight: 0.36 g (typ.)