View 2sd1149 e datasheet:

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. 0.1 to 0.3 Absolute Maximum Ratings (Ta=25?C) 0.4± 0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V 1:Base JEDEC:TO–236 Emitter to base voltage VEBO 15 V 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Peak collector current ICP 50 mA Collector current IC 20 mA Marking symbol : 1V