View 2sd1159 datasheet:

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions · Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 200 V Collector-to-Emitter Voltage VCEO 60 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 4.5 A Collector Current (Pulse) ICP 10 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C E