View 2sd1160 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collecto
Keywords
2sd1160 Datasheet, Design, MOSFET, Power
2sd1160 RoHS, Compliant, Service, Triacs, Semiconductor
2sd1160 Database, Innovation, IC, Electricity
