View 2sd1160 datasheet:

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications • High DC current gain • Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B • Built-in free wheel diode Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current A Pulse ICP 4 Diode forward surge current (t = 1 s) IFP 1 A Ta = 25°C 1 Collector power PC W JEDEC ? dissipation Tc = 25°C 10 JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-7B1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE ?