View 2sd1198 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9± 0.1 2.5± 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixing to the printed circuit board. 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD1198 30 VCBO V base voltage 2SD1198A 60 2.5 2.5 Collector to 2SD1198 25 VCEO V emitter voltage 2SD1198A 50 1:Base 2:Collector EIAJ:SC–71 Emitter to base voltage VEBO 5 V 3:Emitte
Keywords
2sd1198 e Datasheet, Design, MOSFET, Power
2sd1198 e RoHS, Compliant, Service, Triacs, Semiconductor
2sd1198 e Database, Innovation, IC, Electricity
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