View 2sd1199 e datasheet:

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.55± 0.1 0.45± 0.05 3 2 1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 2.5 2.5 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1:Base Emitter to base voltage VEBO 15 V 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipa