View 2sd1423 e datasheet:

Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1030 and 2SB1030A 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector to 2SD1423 25 VCEO V 1.27 1.27 emitter voltage 2SD1423A 50 2.54± 0.15 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A 1:Emitter Collector current IC 0.5 A 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditio