View 2sd1450 e datasheet:

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V 1.27 1.27 2.54± 0.15 Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A 1:Emitter Collector current IC 0.5 A 2:Collector EIAJ:SC–72 Collector power dissipation (Ta=25?C) PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Colle