View 2sd1458 e datasheet:

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 2.5 2.5 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A 1:Base 2:Collector EIAJ:SC–71 Collector current IC 0.7 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage tempe