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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd1478_e

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm +0.2 For low-frequency amplification 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.1 to 0.3 0.4± 0.2 Collector to 2SD1478 30 VCBO V base voltage 2SD1478A 60 Collector to 2SD1478 25 1:Base JEDEC:TO–236 VCEO V 2:Emitter EIAJ:SC–59 emitter voltage 2SD1478A 50 3:Collector Mini Type Package Emitter to base voltage VEBO 5 V Marking symbol : 2N(2SD1478) Peak collector current ICP 750 mA 2O(2SD1478A) Collector c

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