View 2sd1618 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions · Low collector-to-emitter saturation voltage. unit:mm · Very small size making it easy to provide high- 2038 density, small-sized hybrid ICs. [2SB1118/2SD1618] E : Emitter C : Collector B : Base ( ) : 2SB1118 SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()20 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()0.7 A Collector Current (Pulse) ICP ()1.5 A Collector Dissipation PC 500 mW 2 Mounted on ceramic board (250mm ?0.8mm) 1.3 W Junct
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2sd1618 Datasheet, Design, MOSFET, Power
2sd1618 RoHS, Compliant, Service, Triacs, Semiconductor
2sd1618 Database, Innovation, IC, Electricity
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