View 2sd1620 datasheet:

Ordering number:EN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features Package Dimensions · Less power dissipation because of low VCE(sat), unit:mm permitting more flashes of light to be emitted. 2038A · Large current capacity and highly resistant to break- [2SD1620] down. 4.5 · Excellent linearity of hFE in the region from low 1.5 1.6 current to high current. · Ultrasmall size supports high-density, ultrasmall- sized hybrid IC designs. 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V VCEX 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage