View 2sd1631 datasheet:

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Continuous collector current IC 1.5 A Continuous base current IB 50 mA JEDEC ? Collector power dissipation PC 1000 mW JEITA ? Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Eq