View 2sd1658 datasheet:

2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B • Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.5 A JEDEC ? Ta = 25°C 1.5 Collector power PC W dissipation JEITA ? Tc = 25°C 10 TOSHIBA 2-8H1A Junction temperature Tj 150 °C Storage temperature r