View 2sd1662 datasheet:

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C • Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C • Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25°C) JEDEC ? Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-16C1A Equivalent Circuit Weight: 4.7 g (typ.)