View 2sd1679 e datasheet:

Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 0.4± 0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 18± 5 V Collector to emitter voltage VCEO 18± 5 V 1:Base JEDEC:TO–236 Emitter to base voltage VEBO 5 V 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Peak collector current ICP 1 A Collector current I