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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd1681

Ordering number:2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions · Converters, relay drivers, low-voltage and high unit:mm power AF Amplifier. 2042A [2SB1141/2SD1681] Features · Low saturation voltage and excellent linearity of hFE. · Wide ASO. B : Base C : Collector E : Emitter ( ) : 2SB1141 SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)20 V Collector-to-Emitter Voltage VCEO (–)18 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)1.2 A Collector Current (Pulse) ICP (–)2.0 A Collector Dissipation PC 1.5 W Tc=25?C 10 W Junction Temperature Tj 150 ?C Storage Temperature

Keywords

 2sd1681 Datasheet, Design, MOSFET, Power

 2sd1681 RoHS, Compliant, Service, Triacs, Semiconductor

 2sd1681 Database, Innovation, IC, Electricity

 

 
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