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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd1784

2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 1.5 A Base current IB 50 mA PC Collector power dissipation 1000 mW (Note) JEDEC ? Junction temperature Tj 150 °C JEITA SC-62 Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5K1A Note: 2SD1784 mounted on ceramic substra

Keywords

 2sd1784 Datasheet, Design, MOSFET, Power

 2sd1784 RoHS, Compliant, Service, Triacs, Semiconductor

 2sd1784 Database, Innovation, IC, Electricity

 

 
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