View 2sd1819a e datasheet:

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1218A 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2± 0.1 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V 1:Base Peak collector current ICP 200 mA 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package Collector current IC 100 mA Collector power dissipation PC 150 mW Marking symbol : Z Junction temperature T