View 2sd2130 datasheet:

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B • Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 6 V DC IC ±4 Collector current A Pulse ICP ±6 JEDEC ? Base current IB 0.5 A JEITA ? Ta = 25°C 1.5 Collector power TOSHIBA 2-8H1A PC W dissipation Tc = 25°C 10 Weight: 0.82 g (typ.) Junctio