View 2sd2167 datasheet:

2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 Features External dimensions (Units : mm) 1) Built-in zener diode between collector and base. 4.0 2) Zener diode has low voltage dispersion. 1.0 2.5 0.5 3) Strong protection against reverse power surges due (1) to low loads. (2) 4) PC=2 W (on 40?40?0.7mm ceramic board) (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : MPT3 EIAJ : SC-62 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 31±4 V Collector-emitter voltage VCEO 31±4 V Emitter-base voltage VEBO 5 V 2 A(DC) Collector current IC 3 A(Pulse) ? 1 0.5 W Collector power dissipation PC 2 W ? 2 Junction temperature Tj 150 °C Storage temperature Tstg -55 ? +150 °C ? 1 Pw=20ms , duty=1 / 2