View 2sd2177a e datasheet:

Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Collector current IC 2 A the upper figure, the 3:Base Peak collector current ICP 3 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC*1 1 W also available. Junction temperature Tj 150 ?C S