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View 2sd2179 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2179_e

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SB1446 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Note: In addition to the 1:Emitter Emitter to base voltage VEBO 5 V lead type shown in 2:Collector the upper figure, the 3:Base Peak collector current ICP 7 A type as shown in MT2 Type Package Collector current IC 5 A the lower figure is also available. Collector pow

Keywords

 2sd2179 e Datasheet, Design, MOSFET, Power

 2sd2179 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2179 e Database, Innovation, IC, Electricity

 

 
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