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View 2sd2185 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2185_e

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SB1440 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45° and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V marking Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 4 A 1:Base 2:Collector EIAJ:SC–62 Collector current IC 3 A 3:Emitter Mini Power Type Package Collector power dissipation PC* 1 W Junction temperat

Keywords

 2sd2185 e Datasheet, Design, MOSFET, Power

 2sd2185 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2185 e Database, Innovation, IC, Electricity

 

 
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