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View 2sd2357 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2357_e

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1537 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4± 0.08 zine packing. 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit marking Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 5 V 1:Base 2:Collector EIAJ:SC–62 Peak collector current ICP 1.2 A 3:Emitter Mini Power Type Package Collector current IC 1 A Collector power dis

Keywords

 2sd2357 e Datasheet, Design, MOSFET, Power

 2sd2357 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2357 e Database, Innovation, IC, Electricity

 

 
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