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View 2sd2413 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2413_e

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45° Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4± 0.08 Mini Power type package, allowing downsizing of the equipment 0.4± 0.04 0.5± 0.08 and automatic insertion through the tape packing and the maga- 1.5± 0.1 3.0± 0.15 zine packing. 3 2 1 Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 400 V 1:Base Collector to emitter voltage VCEO 400 V 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package Emitter to base voltage VEBO 5 V Peak colle

Keywords

 2sd2413 e Datasheet, Design, MOSFET, Power

 2sd2413 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2413 e Database, Innovation, IC, Electricity

 

 
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