View 2sd2414 datasheet:

2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Unit: mm Power Amplifier Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at I = 4 A) C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Ta = 25°C 1.5 Collector power PC W dissipation Tc = 25°C 40 JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-10S2 Weight: 1.4 g (typ.) 1 2003-02-04 2SD2414(SM) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector