View 2sd2416 e datasheet:

Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. 45° Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4± 0.08 0.4± 0.04 0.5± 0.08 zine packing. 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60+25 V –10 Collector to emitter voltage VCEO 60+25 V –10 1:Base Emitter to base voltage VEBO 5 V 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package Peak collector current ICP 1.5 A Collector current IC